Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts

In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. addition interfacial oxide (SiOx) and in-situ phosphorous doped micro-crystalline (?c-Si(n)) layer, it comprises ultra-thin indium tin (ITO) layer of 15 nm for lateral conductivity hydrogen rich nitride (SiNx:H) which serves as (H) reservoir anti-reflection coating. We use one single thermal treatment 30 min at 350 °C sinter the screen-printed paste, recover sputtering damage induced during ITO deposition, diffuse from SiNx:H towards c-Si/SiOx interface where passivates defects.